TP65H100G4PS Datasheet | Renesas

Specifications in this document are tentative and subject to change 650V Super Ga N® Ga N FET in TO-220 (source tab) Description The TP65H100G4PS650V, 92mΩ Gallium Nitride (Ga N) FET is a normally-off device using Renesas’s Gen IV platform. It bines a state-of-the-art high voltage Ga N HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV Super Ga N® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge. Related Literature - Printed Circuit Board Layout and Probing - Remendations for Vapor Phase Reflow - Remended External Circuitry for Ga N FETs - PQFN Tape and Reel Information Product Series and Ordering Information Part Number TP65H100G4PS Package TO-220 Package Configuration Source TP65H100G4PS TO-220 (top view) S Features - Gen IV technology - JEDEC-qualified Ga N technology - Dynamic RDS(on)eff production tested - Robust design, defined by - Wide gate safety margin - Transient over-voltage capability - Very low QRR - Reduced crossover loss - Ro HS pliant and Halogen-free packaging Benefits - Achieves increased efficiency in both hard- and soft-switched circuits - Increased power density - Reduced system size and...