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TP70H150G4LSG - 700V GaN FET

Product Overview

Renesas

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TP70H150G4LSG 700V GaN FET by Renesas - Datasheet Preview — Datasheet preview – TP70H150G4LSG

Datasheet Details

Part number	TP70H150G4LSG
Manufacturer	Renesas
File Size	817.42 KB
Description	700V GaN FET
Datasheet	TP70H150G4LSG Datasheet
Additional preview pages of the TP70H150G4LSG datasheet.

Product details

Description

The TP70H150G4LSG 700V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’ Gen IV platform.

It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.

Features

Gen IV technology.
JEDEC-qualified GaN technology.
Dynamic RDS(on)eff production tested.
Robust design, defined by.
Wide gate safety margin.
Transient over-voltage capability.
Very low QRR.
Reduced crossover loss.
RoHS compliant and Halogen-free packaging.

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Published: May 9, 2025 |