TP70H150G4LSGB Overview
The TP70H150G4LSGB 700V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’ Gen IV platform. It bines a state-of-theart high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge,...
TP70H150G4LSGB Key Features
- Gen IV technology
- JEDEC-qualified GaN technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by
- Transient over-voltage capability
- Operation with E-mode Gate drivers without
- Very low QRR
- Reduced crossover loss
- RoHS pliant and Halogen-free packaging
- 2 kV HBM ESD rating