Datasheet4U Logo Datasheet4U.com

TP70H150G4LSGB - 650V GaN FET

General Description

The TP70H150G4LSGB 700V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’ Gen IV platform.

It combines a state-of-theart high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.

Key Features

  • Gen IV technology.
  • JEDEC-qualified GaN technology.
  • Dynamic RDS(on)eff production tested.
  • Robust design, defined by.
  • Transient over-voltage capability.
  • Operation with E-mode Gate drivers without need for Zener protection.
  • Very low QRR.
  • Reduced crossover loss.
  • RoHS compliant and Halogen-free packaging.
  • 2 kV HBM ESD rating.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TP70D00E20 ENCODERS TOCOS
TP70D96AE20 ENCODERS TOCOS
TP70G00AE20 ENCODERS TOCOS
TP70G00E20 ENCODERS TOCOS
TP70N00AE20 ENCODERS TOCOS

Other Datasheets by Renesas

Part Number Description
TP70H150G4LSG 700V GaN FET
TP70H240G4ZS 700V GaN FET
TP70H300G4JSGB 700V GaN FET
TP70H300G4LSG 700V GaN FET
TP70H300G4LSGB 700V GaN FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TP70H150G4LSGB 650V SuperGaN® GaN FET in PQFN (source tab) Datasheet Description The TP70H150G4LSGB 700V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’ Gen IV platform. It combines a state-of-theart high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.