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TP70H300G4LSG - 700V GaN FET

Datasheet Summary

Description

The TP70H300G4LSG 700V, 240mΩ Gallium Nitride (GaN) FET is a normally-off device that uses Renesas’ Gen IV platform.

It combines a state-of-theart high-voltage GaN HEMT with a low-voltage silicon MOSFET to offer superior reliability and performance.

Features

  • Gen IV technology.
  • JEDEC-qualified GaN technology.
  • Dynamic RDS(on)eff production tested.
  • Robust design, defined by:.
  • Transient over-voltage capability.
  • Operation with E-mode gate drivers without need for Zener protection.
  • Zero reverse recovery charge.
  • Reduced crossover loss.
  • RoHS compliant and Halogen-free packaging.
  • 2kV HBM ESD rating.

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Datasheet Details

Part number TP70H300G4LSG
Manufacturer Renesas
File Size 836.27 KB
Description 700V GaN FET
Datasheet download datasheet TP70H300G4LSG Datasheet
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TP70H300G4LSG 700V SuperGaN® GaN FET in PQFN (source tab) Datasheet Description The TP70H300G4LSG 700V, 240mΩ Gallium Nitride (GaN) FET is a normally-off device that uses Renesas’ Gen IV platform. It combines a state-of-theart high-voltage GaN HEMT with a low-voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.
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