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TP70H300G4LSGB - 700V GaN FET

Product Overview

Renesas

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TP70H300G4LSGB 700V GaN FET by Renesas - Datasheet Preview — Datasheet preview – TP70H300G4LSGB

Datasheet Details

Part number	TP70H300G4LSGB
Manufacturer	Renesas
File Size	833.44 KB
Description	700V GaN FET
Datasheet	TP70H300G4LSGB Datasheet
Additional preview pages of the TP70H300G4LSGB datasheet.

Product details

Description

The TP70H300G4LSGB 700V, 240 mΩ Gallium Nitride (GaN) FET is a normally-off device that uses Renesas’ Gen IV platform.

It combines a state-of-theart high-voltage GaN HEMT with a low-voltage silicon MOSFET to offer superior reliability and performance.

Features

Gen IV technology.
JEDEC-qualified GaN technology.
Dynamic RDS(on)eff production tested.
Robust design, defined by.
Transient over-voltage capability.
Operation with E-mode gate drivers without need for Zener protection.
Very low QRR.
Reduced crossover loss.
RoHS compliant and Halogen-free packaging.
2 kV HBM ESD rating.

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Published: May 6, 2025 |