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TP70H300G4LSGB - 700V GaN FET

General Description

The TP70H300G4LSGB 700V, 240 mΩ Gallium Nitride (GaN) FET is a normally-off device that uses Renesas’ Gen IV platform.

It combines a state-of-theart high-voltage GaN HEMT with a low-voltage silicon MOSFET to offer superior reliability and performance.

Key Features

  • Gen IV technology.
  • JEDEC-qualified GaN technology.
  • Dynamic RDS(on)eff production tested.
  • Robust design, defined by.
  • Transient over-voltage capability.
  • Operation with E-mode gate drivers without need for Zener protection.
  • Very low QRR.
  • Reduced crossover loss.
  • RoHS compliant and Halogen-free packaging.
  • 2 kV HBM ESD rating.

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TP70H300G4LSG 700V GaN FET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TP70H300G4LSGB 700V SuperGaN® GaN FET in PQFN(source tab) Datasheet Description The TP70H300G4LSGB 700V, 240 mΩ Gallium Nitride (GaN) FET is a normally-off device that uses Renesas’ Gen IV platform. It combines a state-of-theart high-voltage GaN HEMT with a low-voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.