TP70H300G4LSGB
Description
The TP70H300G4LSGB 700V, 240 mΩ Gallium Nitride (Ga N) FET is a normally-off device that uses Renesas’ Gen IV platform. It bines a state-of-theart high-voltage Ga N HEMT with a low-voltage silicon MOSFET to offer superior reliability and performance. The Gen IV Super Ga N® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.
Benefits
- Achieves increased efficiency in both hard- and soft-switched circuits
- Increased power density
- Reduced system size and weight
- Overall lower system cost
- Easy to drive with Si gate drivers
Product/Schematic Diagrams
TP70H300G4LSGB PQFN
Features
- Gen IV technology
- JEDEC-qualified Ga N technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by
- Transient over-voltage capability
- Operation with E-mode gate drivers without need for Zener protection.
- Very...
