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UPA2521 Datasheet PDF

Renesas Electronics UPA2521

The μ PA2521 is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipments.
Part No. UPA2521
Datasheet UPA2521 Download
Manufacturer
Renesas Electronics
Description MOS FIELD EFFECT TRANSISTOR
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UPA2521 datasheet page 1 preview

DESCRIPTION

PACKAGE DRAWING (Unit: mm) 2.9±0.1 0.65 8 5 A 0.17±0.05

FEATURES

● Low on-state resistance RDS(on)1 = 16.5 mΩ MAX. (VGS = 10 V, ID = 8.0 A) RDS(on)2 = 25 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A)
● Built-in gate protection diode
● Small and surface mount package (8-pin VSOF (2429))
● Pb-free (This product does not contain Pb in external electrode and other parts.) 0 to 0.025 2.8±0.1 2.4±0.1 1 0.32±0.05 4 0.05 M S A (0.3) 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain 0.8±0.05 S

ABSOLUTE MAXIMUM RATINGS

(TA = 25°C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) VDSS 30 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) Drain Current (pulse) Note1 Total Power Dissipation Note2 Total Power Dissipation (PW = 5 sec) Note2 ID(DC) ID(pulse) PT1 PT2 ±8 ±32 1.0 2.2 A A W W Channel Temperature Tch 150 °C Storage Temperature Single Avalanche Current Note3 Single Avalanche Energy Note3 Tstg −55 to +150 °C IAS 8 A EAS 6.4 mJ Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2.
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