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UPA2520 - MOS FIELD EFFECT TRANSISTOR

General Description

designed for DC/DC converter and power management applications of portable equipments.

Key Features

  • Low on-state resistance RDS(on)1 = 13.2 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 17 mΩ MAX. (VGS = 4.5 V, ID = 5.0 A).
  • Built-in gate protection diode.
  • Small and surface mount package (8-pin VSOF (2429)).
  • Pb-free (This product does not contain Pb in external electrode and other parts. ) 0 to 0.025 2.8±0.1 2.4±0.1 1 0.32±0.05 4 0.05 M S A (0.3) 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain 0.8±0.05 S.

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Datasheet Details

Part number UPA2520
Manufacturer Renesas
File Size 292.54 KB
Description MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet UPA2520 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2520 N-CHANNEL MOS FET FOR SWITCHING DESCRIPTION The μ PA2520 is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipments. PACKAGE DRAWING (Unit: mm) 2.9±0.1 0.65 8 5 A 0.17±0.05 FEATURES • Low on-state resistance RDS(on)1 = 13.2 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 17 mΩ MAX. (VGS = 4.5 V, ID = 5.0 A) • Built-in gate protection diode • Small and surface mount package (8-pin VSOF (2429)) • Pb-free (This product does not contain Pb in external electrode and other parts.) 0 to 0.025 2.8±0.1 2.4±0.1 1 0.32±0.05 4 0.05 M S A (0.3) 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain 0.8±0.05 S ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.