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uPA2550 - DUAL P-CHANNEL MOSFET

General Description

The μ PA2550 is dual P-channel MOSFETs designed for power management applications of portable equipments, such as load switch.

Dual P-channel MOSFETs are assembled in one package, to contribute minimize the equipments.

Key Features

  • 1.8 V drive available.
  • Low on-state resistance RDS(on)1 = 40 mΩ MAX. (VGS =.
  • 4.5 V, ID =.
  • 2.5 A) RDS(on)2 = 60 mΩ MAX. (VGS =.
  • 2.5 V, ID =.
  • 2.5 A) RDS(on)3 = 93 mΩ MAX. (VGS =.
  • 1.8 V, ID =.
  • 2.5 A).
  • Built-in gate protection diode.
  • Small and surface mount package (8-pin VSOF (2429)) 1 0.32±0.05 4 0.05 M S A 0.8±0.05 S (0.3) 1: Source1 2: Gate1 3: Source2 4: Gate2 5, 6: Drain2 7, 8: Drain1.

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Datasheet Details

Part number uPA2550
Manufacturer Renesas
File Size 290.29 KB
Description DUAL P-CHANNEL MOSFET
Datasheet download datasheet uPA2550 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2550 DUAL P-CHANNEL MOSFET FOR SWITCHING DESCRIPTION The μ PA2550 is dual P-channel MOSFETs designed for power management applications of portable equipments, such as load switch. Dual P-channel MOSFETs are assembled in one package, to contribute minimize the equipments. PACKAGE DRAWING (Unit: mm) 2.9±0.1 0.65 8 5 A 0.17±0.05 0 to 0.025 2.8±0.1 2.4±0.1 FEATURES • 1.8 V drive available • Low on-state resistance RDS(on)1 = 40 mΩ MAX. (VGS = −4.5 V, ID = −2.5 A) RDS(on)2 = 60 mΩ MAX. (VGS = −2.5 V, ID = −2.5 A) RDS(on)3 = 93 mΩ MAX. (VGS = −1.8 V, ID = −2.5 A) • Built-in gate protection diode • Small and surface mount package (8-pin VSOF (2429)) 1 0.32±0.05 4 0.05 M S A 0.8±0.05 S (0.