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uPA2560 Datasheet Dual N-channel MOSFET

Manufacturer: Renesas

Overview: DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2560 Dual N-CHANNEL MOSFET FOR.

General Description

The μ PA2560 is Dual N-channel MOSFETs designed for Back light inverters and power management applications of portable equipments.

Dual N-channel MOSFETs are assembled in one package, to contribute minimize the equipments.

Key Features

  • 4.5 V drive available.
  • Low on-state resistance RDS(on)1 = 50 mΩ MAX. (VGS = 10 V, ID = 2 A) RDS(on)2 = 83 mΩ MAX. (VGS = 4.5 V, ID = 2 A).
  • Built-in gate protection diode.
  • Small and surface mount package (8-pin VSOF (2429)).

uPA2560 Distributor