Click to expand full text
Data Sheet
μPA2630T1R
P-CHANNEL MOSFET –12 V, –7.0 A, 28 mΩ
Description
The μPA2630T1R is P-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. R07DS0990EJ0100 Rev.1.00 Dec 27, 2012
Features
• –1.8V drive available • Low on-state resistance ⎯ RDS (on)1 = 28 mΩ MAX. (VGS = –4.5 V, ID = –3.5 A) ⎯ RDS (on)2 = 35 mΩ MAX. (VGS = –2.5 V, ID = –3.5 A) ⎯ RDS (on)2 = 59 mΩ MAX. (VGS = –1.8 V, ID = –3.5 A) • Built-in gate protection diode • Lead-free and Halogen-free
6pinHUSON2020
Ordering Information
Part Number Package 6pinHUSON2020 Note: ∗1.