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Data Sheet
μPA2660T1R
DUAL N-CHANNEL MOSFET 20 V, 4.0 A, 42 mΩ
Description
The μPA2660T1R is Dual N-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. R07DS0999EJ0100 Rev.1.00 Jan 16, 2013
Features
• DS MAXIMUM RATINGS 20V(TA = 25°C) • 2.5V drive available • Low on-state resistance ⎯ RDS (on)1 = 42 mΩ MAX. (VGS = 4.5 V, ID = 2.0 A) ⎯ RDS (on)2 = 62 mΩ MAX. (VGS = 2.5 V, ID = 2.0 A) • Built-in gate protection diode • Lead-free and Halogen-free
6pinHUSON2020(Dual)
Ordering Information
Part Number Package 6pinHUSON2020(Dual) Note: ∗1.