UPA2762UGR Description
R07DS0011EJ0100 Rev.1.00 Jun 01, 2010 The μ PA2762UGR is N-Channel MOS Field Effect Transistor designed for power management applications of a notebook puter.
UPA2762UGR Key Features
- Low on-state resistance ⎯ RDS(on)1 = 13.5 mΩ MAX. (VGS = 10 V, ID = 12 A) ⎯ RDS(on)2 = 22 mΩ MAX. (VGS = 4.5 V, ID = 10
- Low Ciss: Ciss = 710 pF TYP. (VDS = 15 V, VGS = 0 V)
- Small and surface mount package (Power SOP8)
- RoHS pliant