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UPA2762UGR - MOS FIELD EFFECT TRANSISTOR

Datasheet Summary

Description

The μ PA2762UGR is N-Channel MOS Field Effect Transistor designed for power management applications of a notebook computer.

Features

  • Low on-state resistance ⎯ RDS(on)1 = 13.5 mΩ MAX. (VGS = 10 V, ID = 12 A) ⎯ RDS(on)2 = 22 mΩ MAX. (VGS = 4.5 V, ID = 10 A).
  • Low Ciss: Ciss = 710 pF TYP. (VDS = 15 V, VGS = 0 V).
  • Small and surface mount package (Power SOP8).
  • RoHS Compliant Ordering Information Part No. μ PA2762UGR-E1-AT ∗1 μ PA2762UGR-E2-AT ∗1 LEAD.

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Datasheet Details

Part number UPA2762UGR
Manufacturer Renesas
File Size 222.60 KB
Description MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet UPA2762UGR Datasheet
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Full PDF Text Transcription

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Preliminary Data Sheet μ PA2762UGR MOS FIELD EFFECT TRANSISTOR Description R07DS0011EJ0100 Rev.1.00 Jun 01, 2010 The μ PA2762UGR is N-Channel MOS Field Effect Transistor designed for power management applications of a notebook computer. Features • Low on-state resistance ⎯ RDS(on)1 = 13.5 mΩ MAX. (VGS = 10 V, ID = 12 A) ⎯ RDS(on)2 = 22 mΩ MAX. (VGS = 4.5 V, ID = 10 A) • Low Ciss: Ciss = 710 pF TYP. (VDS = 15 V, VGS = 0 V) • Small and surface mount package (Power SOP8) • RoHS Compliant Ordering Information Part No. μ PA2762UGR-E1-AT ∗1 μ PA2762UGR-E2-AT ∗1 LEAD PLATING Pure Sn (Tin) PACKING Tape 2500 p/reel Package Power SOP8 0.08 g TYP. Note: ∗1. Pb-free (This product does not contain Pb in external electrode and other parts.
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