UPA2763
Description
R07DS0003EJ0100 Rev.1.00 May 31, 2010 The μ PA2763 is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications.
Key Features
- Low on-state resistance ⎯ RDS(on)1 = 23.0 mΩ MAX. (VGS = 10 V, ID = 21 A) ⎯ RDS(on)2 = 28.0 mΩ MAX. (VGS = 8 V, ID = 21 A)
- Low Ciss 2100 pF TYP
- Built-in gate protection diode
- Thin type surface mount package with heat spreader (8-pin HVSON)
