UPA2763 - MOS FIELD EFFECT TRANSISTOR

Product Overview

Renesas

Datasheet Details

Part number	UPA2763
Manufacturer	Renesas
File Size	260.35 KB
Description	MOS FIELD EFFECT TRANSISTOR
Datasheet	UPA2763 Datasheet
Additional preview pages of the UPA2763 datasheet.

Product details

Description

R07DS0003EJ0100 Rev.1.00 May 31, 2010 The μ PA2763 is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications.

Features

Low on-state resistance ⎯ RDS(on)1 = 23.0 mΩ MAX. (VGS = 10 V, ID = 21 A) ⎯ RDS(on)2 = 28.0 mΩ MAX. (VGS = 8 V, ID = 21 A).
Low Ciss 2100 pF TYP.
Built-in gate protection diode.
Thin type surface mount package with heat spreader (8-pin HVSON).
RoHS Compliant Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) ∗1 Total Power Dissipation∗.

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Published: Sep 17, 2013 |