Datasheet Details
| Part number | UPA2763 |
|---|---|
| Manufacturer | Renesas |
| File Size | 260.35 KB |
| Description | MOS FIELD EFFECT TRANSISTOR |
| Datasheet |
 UPA2763 Datasheet
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General Description
The μ PA2763 is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications.
Key Features
- Low on-state resistance ⎯ RDS(on)1 = 23.0 mΩ MAX. (VGS = 10 V, ID = 21 A) ⎯ RDS(on)2 = 28.0 mΩ MAX. (VGS = 8 V, ID = 21 A).
- Low Ciss 2100 pF TYP.
- Built-in gate protection diode.
- Thin type surface mount package with heat spreader (8-pin HVSON).
- RoHS Compliant Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) ∗1 Total Power Dissipation∗.