UPA2763 Datasheet PDF - Renesas MOS FIELD EFFECT TRANSISTOR Specs

UPA2763 - MOS FIELD EFFECT TRANSISTOR

Datasheet Summary

Description

The μ PA2763 is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications.

Features

Low on-state resistance ⎯ RDS(on)1 = 23.0 mΩ MAX. (VGS = 10 V, ID = 21 A) ⎯ RDS(on)2 = 28.0 mΩ MAX. (VGS = 8 V, ID = 21 A).
Low Ciss 2100 pF TYP.
Built-in gate protection diode.
Thin type surface mount package with heat spreader (8-pin HVSON).
RoHS Compliant Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) ∗1 Total Power Dissipation∗.

Datasheet Details

Part number	UPA2763
Manufacturer	Renesas
File Size	260.35 KB
Description	MOS FIELD EFFECT TRANSISTOR
Datasheet	UPA2763 Datasheet
Additional preview pages of the UPA2763 datasheet.

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Full PDF Text Transcription

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Preliminary Data Sheet μ PA2763 MOS FIELD EFFECT TRANSISTOR Description R07DS0003EJ0100 Rev.1.00 May 31, 2010 The μ PA2763 is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications. Features • Low on-state resistance ⎯ RDS(on)1 = 23.0 mΩ MAX. (VGS = 10 V, ID = 21 A) ⎯ RDS(on)2 = 28.0 mΩ MAX. (VGS = 8 V, ID = 21 A) • Low Ciss 2100 pF TYP.

Published: Sep 17, 2013 |