UPA2810 - MOS FIELD EFFECT TRANSISTOR

Renesas

General Description

The μ PA2810 is P-channel MOSFET designed for DC/DC converter and power management applications of portable equipments.

Key Features

Low on-state resistance RDS(on)1 = 12 mΩ MAX. (VGS =.
10 V, ID =.
13 A) RDS(on)2 = 23 mΩ MAX. (VGS =.
4.5 V, ID =.
6.5 A).
Built-in gate protection diode.
Thin type surface mount package with heat spreader.
RoHS Compliant.

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UPA2810 mos field effect transistor by Renesas - Datasheet Preview

Datasheet Details

Part number	UPA2810
Manufacturer	Renesas
File Size	297.93 KB
Description	MOS FIELD EFFECT TRANSISTOR
Datasheet	UPA2810 Datasheet

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DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2810 SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The μ PA2810 is P-channel MOSFET designed for DC/DC converter and power management applications of portable equipments. FEATURES • Low on-state resistance RDS(on)1 = 12 mΩ MAX. (VGS = −10 V, ID = −13 A) RDS(on)2 = 23 mΩ MAX. (VGS = −4.5 V, ID = −6.5 A) • Built-in gate protection diode • Thin type surface mount package with heat spreader • RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) VDSS −30 V Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 Total Power Dissipation Note2 Total Power Dissipation (PW = 10 sec) Note2 VGSS ID(DC) ID(pulse) PT1 PT2 m20 m13 m78 1.5 3.