UPD5741T6J Datasheet Low Noise And High Gain Amplifier

Manufacturer: Renesas

Overview: DATA SHEET MOS ANALOG INTEGRATED CIRCUIT μPD5741T6J LOW NOISE AND HIGH GAIN AMPLIFIER FOR IMPEDANCE CONVERTER OF.

Datasheet Details

Part number	UPD5741T6J
Manufacturer	Renesas
File Size	115.77 KB
Description	LOW NOISE AND HIGH GAIN AMPLIFIER
Datasheet	UPD5741T6J-Renesas.pdf

The μPD5741T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone.

This device exhibits low noise and high voltage gain characteristics.

The package is 3-pin thin-type lead-less minimold, suitable for surface mount.

Low Noise : NV =.
101 dBV TYP. @ VDD = 2 V, Cin = 3 pF, RL = 2.2 kΩ : NV =.
102 dBV TYP. @ VDD = 2 V, Cin = 5 pF, RL = 2.2 kΩ.
High Gain : GV = +6.5 dB TYP. @ VDD = 2 V, Cin = 3 pF, RL = 2.2 kΩ : GV = +8.5 dB TYP. @ VDD = 2 V, Cin = 5 pF, RL = 2.2 kΩ.
Low Consumption Current : IDD = 250 μA TYP. @ VDD = 2 V, RL = 2.2 kΩ.
Built-in the capacitor for RF noise immunity.
High ESD voltage.
3-pin thin-type lead-less minimol.

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