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UPD5741T6J

UPD5741T6J is LOW NOISE AND HIGH GAIN AMPLIFIER manufactured by Renesas.
UPD5741T6J datasheet preview

UPD5741T6J Datasheet

Part number UPD5741T6J
Download UPD5741T6J Datasheet (PDF)
File Size 115.77 KB
Manufacturer Renesas
Description LOW NOISE AND HIGH GAIN AMPLIFIER
UPD5741T6J page 2 UPD5741T6J page 3

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UPD5741T6J Distributor

UPD5741T6J Description

The μPD5741T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone. This device exhibits low noise and high voltage gain characteristics. The package is 3-pin thin-type lead-less minimold, suitable for surface mount.

UPD5741T6J Key Features

  • Low Noise
  • High Gain
  • Low Consumption Current : IDD = 250 μA TYP. @ VDD = 2 V, RL = 2.2 kΩ
  • Built-in the capacitor for RF noise immunity
  • High ESD voltage
  • 3-pin thin-type lead-less minimold (1.2 × 1.0 × 0.33 mm)

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