X28C512
feature the JEDEC approved pin out for byte wide memories, patible with industry standard EPROMS.
The X28C512, X28C513 support a 128-byte page write operation, effectively providing a 39µs/byte write cycle and enabling the entire memory to be written in less than 2.5 seconds. The X28C512, X28C513 also feature
DATA Polling and Toggle Bit Polling, system software support schemes used to indicate the early pletion of a write cycle. In addition, the X28C512, X28C513 support the software data protection option.
FN8106 Rev 2.00 June 7, 2006
Features
- Access Time: 90ns
- Simple Byte and Page Write
- Single 5V supply
- No external high voltages or VPP control circuits
- Self-timed
- No erase before write
- No plex programming algorithms
- No overerase problem
- Low Power CMOS
- Active: 50m A
- Standby: 500µA
- Software Data Protection
- Protects data against system level inadvertent writes
- High Speed Page Write Capability
- Highly Reliable Direct Write™ Cell
- Endurance: 100,000...
