Renesas Electronics X28C512
The X28C512, X28C513 are 64K x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. The X28C512, X28C513 feature the JEDEC approved pin out for byte wide memories, compatible with industry standard EPROMS. The X28C512, X28C513 support a 128-byte page write operation, effectively providing a 39µs/byte write cycle and enabling the entire memory to be written in less than 2.5 seconds.FEATURES
● Access Time: 90ns● Simple Byte and Page Write - Single 5V supply
● No external high voltages or VPP control circuits - Self-timed
● No erase before write
● No complex programming algorithms
● No overerase problem
● Low Power CMOS - Active: 50mA - Standby: 500µA
● Software Data Protection - Protects data against system level inadvertent writes
● High Speed Page Write Capability
● Highly Reliable Direct Write™ Cell - Endurance: 100,000 write cycles - Data retention: 100 years - Early end of write detection - DATA polling - Toggle bit polling
● Two PLCC and LCC Pinouts - X28C512
● X28C010 EPROM pin compatible - X28C513
● Compatible with lower density EEPROMs
● Pb-Free Plus Anneal Available (RoHS Compliant) FN8106 Rev 2.00 June 7, 2006 Page 1 of 21 X28C512, X28C513 Block Diagram A7-A15 X Buffers Latches and Decoder 512Kbit EEPROM Array A0-A6 Y Buffers Latches and Decoder I/O Buffers and Latches Ordering Information PART NUMBER X28C512D X28C512DM X28C512J X28C513EM X28C512D-12 X...