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X28C513 Datasheet Byte Alterable EEPROM

Manufacturer: Renesas

Download the X28C513 datasheet PDF. This datasheet also includes the X28C512 variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (X28C512-Renesas.pdf) that lists specifications for multiple related part numbers.

Overview

X28C512, X28C513 5V, Byte Alterable EEPROM The X28C512, X28C513 are 64K x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology.

Like all Intersil programmable nonvolatile memories, the X28C512, X28C513 are 5V only devices.

The X28C512, X28C513 feature the JEDEC approved pin out for byte wide memories, compatible with industry standard EPROMS.

Key Features

  • Access Time: 90ns.
  • Simple Byte and Page Write - Single 5V supply.
  • No external high voltages or VPP control circuits - Self-timed.
  • No erase before write.
  • No complex programming algorithms.
  • No overerase problem.
  • Low Power CMOS - Active: 50mA - Standby: 500µA.
  • Software Data Protection - Protects data against system level inadvertent writes.
  • High Speed Page Write Capability.
  • Highly Reliable Direct Write™ Cell.