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X28C513 - Byte Alterable EEPROM

This page provides the datasheet information for the X28C513, a member of the X28C512 Byte Alterable EEPROM family.

Features

  • Access Time: 90ns.
  • Simple Byte and Page Write - Single 5V supply.
  • No external high voltages or VPP control circuits - Self-timed.
  • No erase before write.
  • No complex programming algorithms.
  • No overerase problem.
  • Low Power CMOS - Active: 50mA - Standby: 500µA.
  • Software Data Protection - Protects data against system level inadvertent writes.
  • High Speed Page Write Capability.
  • Highly Reliable Direct Write™ Cell.

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Datasheet preview – X28C513

Datasheet Details

Part number X28C513
Manufacturer Renesas
File Size 833.16 KB
Description Byte Alterable EEPROM
Datasheet download datasheet X28C513 Datasheet
Additional preview pages of the X28C513 datasheet.
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Full PDF Text Transcription

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X28C512, X28C513 5V, Byte Alterable EEPROM The X28C512, X28C513 are 64K x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28C512, X28C513 are 5V only devices. The X28C512, X28C513 feature the JEDEC approved pin out for byte wide memories, compatible with industry standard EPROMS. The X28C512, X28C513 support a 128-byte page write operation, effectively providing a 39µs/byte write cycle and enabling the entire memory to be written in less than 2.5 seconds. The X28C512, X28C513 also feature DATA Polling and Toggle Bit Polling, system software support schemes used to indicate the early completion of a write cycle.
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