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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2755AGR
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION The μ PA2755AGR is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers.
FEATURES • Dual chip type • Low on-state resistance
RDS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID = 4.0 A) RDS(on)2 = 29 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A) • Low input capacitance Ciss = 650 pF TYP. • Built-in G-S protection diode • Small and surface mount package (Power SOP8)
1.8 MAX.
1.44
0.05 MIN.
PACKAGE DRAWING (Unit: mm)
85
14 5.37 MAX.
1 : Source 1 2 : Gate 1 7, 8: Drain 1 3 : Source 2 4 : Gate 2 5, 6: Drain 2
6.0 ±0.3 4.4
0.8
+0.10 –0.05
0.15
1.27 0.78 MAX.
0.40
+0.10 –0.05
0.12 M
0.5 ±0.2
0.
uPA2755AGR Datasheet
