uPA2755AGR
DESCRIPTION
The μ PA2755AGR is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook puters.
FEATURES
- Dual chip type
- Low on-state resistance
RDS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID = 4.0 A) RDS(on)2 = 29 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A)
- Low input capacitance Ciss = 650 p F TYP.
- Built-in G-S protection diode
- Small and surface mount package (Power SOP8)
1.8 MAX.
0.05 MIN.
PACKAGE DRAWING (Unit: mm)
14 5.37 MAX.
1 : Source 1 2 : Gate 1 7, 8: Drain 1 3 : Source 2 4 : Gate 2 5, 6: Drain 2
6.0 ±0.3 4.4
+0.10
- 0.05
1.27 0.78 MAX.
+0.10
- 0.05
0.12 M
0.5 ±0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS
30 V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20 V
Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 Total Power Dissipation (1 unit) Note2 Total Power Dissipation (2 units) Note2
ID(DC) ID(pulse)
PT...
