uPA2757GR
DESCRIPTION
The μ PA2757GR is Dual N-channel MOS Field Effect Transistors designed for switching application.
FEATURES
- Low on-state resistance
RDS(on)1 = 36.0 mΩ MAX. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 50.0 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A)
- Low gate charge QG = 10 n C TYP. (VGS = 10 V)
- Built-in G-S protection diode
- Small and surface mount package (Power SOP8)
PACKAGE DRAWING (Unit: mm)
1 : Source 1 2 : Gate 1 7, 8 : Drain 1
3 : Source 2 4 : Gate 2 5, 6 : Drain 2
14 5.37 MAX.
6.0 ± 0.3 4.4
+0.10
- 0.05
1.27 0.78 MAX.
0.5 ± 0.2
1.8 MAX. 0.05 MIN. 1.44
ORDERING INFORMATION
+0.10
- 0.05
0.12 M
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
μ PA2757GR-E1-AT Note μ PA2757GR-E2-AT Note
Pure Sn
Tape 2500 p/reel
Power SOP8
Note Pb-free (This product does not contain Pb in the external electrode and other parts.)
EQUIVALENT CIRCUIT
(1/2 circuit)
Drain
Gate...
