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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2757GR
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION The μ PA2757GR is Dual N-channel MOS Field Effect Transistors designed for switching application.
FEATURES • Low on-state resistance
RDS(on)1 = 36.0 mΩ MAX. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 50.0 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) • Low gate charge QG = 10 nC TYP. (VGS = 10 V) • Built-in G-S protection diode • Small and surface mount package (Power SOP8)
PACKAGE DRAWING (Unit: mm)
85
1 : Source 1 2 : Gate 1 7, 8 : Drain 1
3 : Source 2 4 : Gate 2 5, 6 : Drain 2
14 5.37 MAX.
6.0 ± 0.3 4.4
0.8
+0.10 –0.05
0.15
1.27 0.78 MAX.
0.5 ± 0.2
0.10
1.8 MAX. 0.05 MIN. 1.44
ORDERING INFORMATION
0.40
+0.10 –0.05
0.
uPA2757GR Datasheet
