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uPD46185362B - 18M-BIT QDR II SRAM 2-WORD BURST OPERATION

Download the uPD46185362B datasheet PDF. This datasheet also covers the uPD46185092B variant, as both devices belong to the same 18m-bit qdr ii sram 2-word burst operation family and are provided as variant models within a single manufacturer datasheet.

General Description

The μPD46185092B is a 2,097,152-word by 9-bit, the μPD46185182B is a 1,048,576-word by 18-bit and the μPD46185362B is a 524,288-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

Key Features

  • 1.8 ± 0.1 V power supply.
  • 165-pin.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (uPD46185092B-Renesas.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number uPD46185362B
Manufacturer Renesas
File Size 613.15 KB
Description 18M-BIT QDR II SRAM 2-WORD BURST OPERATION
Datasheet download datasheet uPD46185362B Datasheet

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Other Datasheets by Renesas

Part Number Description
uPD46185364B 18M-BIT QDR II SRAM 4-WORD BURST OPERATION
uPD46185084B 18M-BIT QDR II SRAM 4-WORD BURST OPERATION
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uPD46185182B 18M-BIT QDR II SRAM 2-WORD BURST OPERATION

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
μPD46185092B μPD46185182B μPD46185362B Datasheet 18M-BIT QDRTM II SRAM 2-WORD BURST OPERATION R10DS0112EJ0200 Rev.2.00 Nov 09, 2012 Description The μPD46185092B is a 2,097,152-word by 9-bit, the μPD46185182B is a 1,048,576-word by 18-bit and the μPD46185362B is a 524,288-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. The μPD46185092B, μPD46185182B and μPD46185362B integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (K and K#) are latched on the positive edge of K and K#. These products are suitable for application which require synchronous operation, high speed, low voltage, high density and wide bit configuration.