H5N2507P Description
H5N2507P 250V - 50A - MOS FET High Speed Power Switching.
H5N2507P Key Features
- Low on-resistance RDS(on) = 0.04 typ. (at ID = 25 A, VGS= 10 V, Ta = 25°C)
- Low leakage current
- High speed switching
- Low gate charge
- Built-in fast recovery diode