H7N1002AB Description
H7N1002AB Silicon N Channel MOS FET High Speed Power Switching REJ03G0130-0200Z Rev.2.00 Oct.30.2003.
H7N1002AB Key Features
- Low on-resistance RDS(on) = 8 mΩ typ
- Low drive current
- Available for 4.5 V gate drive
- Part: H7N1002AB
- Manufacturer: Renesas (official site)
- Size: 231.02 KB
Related Renesas Datasheets
| Part Number | Description |
|---|---|
| H7N1002LD | Silicon N Channel MOS FET High Speed Power Switching |
| H7N1002LM | Silicon N Channel MOS FET High Speed Power Switching |
| H7N1002LS | Silicon N Channel MOS FET High Speed Power Switching |
| H7N1004AB | Silicon N Channel MOS FET High Speed Power Switching |
| H7N1004DL | Silicon N Channel MOS FET High Speed Power Switching |