HAT1108C Description
HAT1108C Silicon P Channel MOS FET Power Switching REJ03G1234-0500 Rev.5.00 Aug 30, 2006.
HAT1108C Key Features
- Low on-resistance RDS(on) = 155 mΩ typ. (at VGS = -10 V)
- Low drive current
- 4.5 V gate drive devices
- High density mounting