HAT1111C Description
HAT1111C Silicon P Channel MOS FET Power Switching REJ03G0446-0600 Rev.6.00 May 19.2005.
HAT1111C Key Features
- Low on-resistance RDS(on) = 245 mΩ typ. (at VGS = -10 V)
- Low drive current
- 4.5 V gate drive devices
- High density mounting
- 6) Index band 4 5 6 2 3 S 1