RJK0389DPA Description
RJK0389DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching REJ03G1722-0300 Rev.3.00 Dec 03, 2008.
RJK0389DPA Key Features
- Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free