RJK6024DPD Description
Datasheet RJK6024DPD Silicon N Channel MOS FET High Speed Power Switching.
RJK6024DPD Key Features
- Low on-resistance RDS(on) = 28 typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25C)
- Low drive current
- High density mounting REJ03G1936-0100 Rev.1.00 Jun 01, 2010