RJK6025DPE Description
RJK6025DPE Silicon N Channel MOS FET High Speed Power Switching.
RJK6025DPE Key Features
- Low on-resistance RDS(on) = 13 Ω typ. (at ID =0.4 A, VGS = 10 V, Ta = 25°C)
- Low leakage current
- High speed switching REJ03G1870-0100 Rev.1.00 Dec 08, 2009