ROHM Semiconductor 1SS400G
Switching diode
APPLICATIONS
High speed switching●Dimensions (Unit : mm) 0.6±0.05 0.13±0.03
●Land size figure (Unit : mm) 0.5 1.0±0.05 1.4±0.05 0.5 1.2
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FEATURES
1)Ultra small mold type.(VMD2) 2)High reliability●Construction Silicon epitaxial planer 0.27±0.03 0.5±0.05 VMD2
●Structure ROHM : VMD2 dot (year week factory)
●Taping dimensions (Unit : mm) 4±0.1 2±0.05 φ1.5+0.1 0 0.18±0.05 1.75±0.1 0.4 3.5±0.05 8.0±0.3 0.1 2.1±0.1 1.11±0.05
●Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (repetitive peak) Reverse voltage (DC) VRM VR Forward current (repetitive peak) IFM Average rectified forward current Io Surge current (1S) Isurge Junction temperature Tj Storage temperature Tstg
●Electrical characteristics (Ta=25C) Parameter Symbol Forward voltage VF Reverse current IR Capacitance between terminal Ct Reverse recovery time Trr 0.76±0.1 Limits 90 80