ROHM Semiconductor 2SA1900
Medium Power Transistor
Transistors 2SA1900 Medium power transistor (−50V, −1A) 2SA1900 zFeatures 1) Low saturation voltage, typically VCE(sat)=−0.15V at IC/ IB=−500mA/−50mA 2) PC=2W (on 40×40×0.7mm ceramic board) 3) Complements the 2SC5053 zDimensions (Unit : mm) MPT3 z Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter- base voltage Collector current Symbol VCBO VCEO VEBO IC Limits −60 −50 −5 −1 −2 Collector power dissipation PC 0.5 2 Collector power dissipation tj 150 Storage temperature tstg −55 to +150 ∗1 Pw=20ms, Duty=1/2 ∗2 When mounted on a 40 40 0.7mm seramic board. + + (1)Base (2)Collector (3)Emitter Unit V V V A A (Pulse) W W °C °C ∗1 ∗2 zElectrical characteristics (Ta=25°C) Parameter Symbol Collector-base breakdown voltage Collector-emitter breakdown voltage BVCBO BVCEO Emitter-base breakdown voltage Collector cutoff current BVEBO ICBO Emitter cutoff current Collector-emitter saturation voltage IEBO VCE(sat) DC current transfer ratio hFE Transitio...