ROHM Semiconductor 2SA2093
Power transistor
FEATURES
1) High speed switching. (Tf : Typ. : 30ns at IC = −2A) 2) Low saturation voltage, typically (Typ. : −200mV at IC = −1.0A, IB = −0.1A) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5880 !External dimensions (Unit : mm) ATV 6.8 2.5 0.65Max. 1.0 0.5 2.54 2.54 0.9 (1) (2) (3) (1) Emitter (2) Collector (3) Base 1.05 14.5 4.4 0.45 Taping specifications Abbreviated symbol : A2093 !APPLICATIONS
Small signal low frequency amplifier High speed switching !Structure PNP Silicon epitaxial planar transistor !Packaging specifications Package Type Taping TV2 2500 Code Basic ordering unit (pieces) 2SA2093 !Absolute maximum ratings (Ta=25°C) Parameter Symbol VCBO VCEO VEBO DC IC ICP PC Limits −60 −60 −6 −2.0 −4.0 1.0 150 −55 to 150 Unit V V V A A W °C °C ∗ Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature ∗Pw=10ms Pulsed Tj Tstg 1/3 2SA2093 Transi...