2SAR514R Datasheet | ROHM

Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -300m A / -15m A) 2) High speed switching - Structure PNP Silicon epitaxial planar transistor - Applications Driver - Dimensions (Unit : mm) TSMT3 (3) (1) (1) Base (2) Emitter (3) Collector (2) Abbreviated symbol : MD - Packaging specifications Package Type Code TSMT3 TL Basic ordering unit (pieces) 3000 - Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulsed Power dissipation Junction temperature Range of storage temperature VCBO VCEO VEBO IC ICP - 1 PD - 2 PD - 3 Tj Tstg -80 -80 -6 -0.7 -1.4 0.5 1.0 150 -55 to 150 - 1 Pw=10ms, Single Pulse - 2 Mounted on a remended land. - 3 Mounted on a 40 x 40 x 0.7[mm3] ceramic substrate. Unit V V V A A W W C C - Inner circuit (1) (1) Base (2) Emitter (3) Collector (23) ((23)) .rohm. ©2010 ROHM Co., Ltd. All rights...