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2SAR514R - Midium Power Transistors

Key Features

  • s 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max. ) (IC / IB= -300mA / -15mA) 2) High speed switching.
  • Structure PNP Silicon epitaxial planar transistor.

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Datasheet Details

Part number 2SAR514R
Manufacturer ROHM
File Size 375.68 KB
Description Midium Power Transistors
Datasheet download datasheet 2SAR514R Datasheet

Full PDF Text Transcription for 2SAR514R (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SAR514R. For precise diagrams, and layout, please refer to the original PDF.

Midium Power Transistors (-80V / -0.7A) 2SAR514R  Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -300mA / -15mA) 2) High speed switchin...

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(sat) = -0.4V (Max.) (IC / IB= -300mA / -15mA) 2) High speed switching  Structure PNP Silicon epitaxial planar transistor  Applications Driver  Dimensions (Unit : mm) TSMT3 (3) (1) (1) Base (2) Emitter (3) Collector (2) Abbreviated symbol : MD  Packaging specifications Package Type Code TSMT3 TL Basic ordering unit (pieces) 3000  Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulsed Power dissipation Junction temperature Range of storage temperature VCBO VCEO VEBO IC ICP *1 PD *2 PD *3 Tj Tstg -80 -80 -6 -0.7 -1.4

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