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Midium Power Transistors (-50V / -3A)
2SAR543R
Structure PNP Silicon epitaxial planar transistor
Features 1) Low saturation voltage
VCE (sat) = -0.4V (Max.) (IC / IB= -2A / -100mA) 2) High speed switching
Applications Driver
Dimensions (Unit : mm)
TSMT3
(3)
(1)
(1) Base (2) Emitter (3) Collector
(2)
Abbreviated symbol : MR
Packaging specifications
Type
Package
TSMT3
Code
TL
Basic ordering unit (pieces) 3000
Inner circuit (Unit : mm)
(2)
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol Limits
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC
Pulsed
Power dissipation
Junction temperature Range of storage temperature
VCBO VCEO VEBO
IC ICP *1 PD *2 PD *3 Tj Tstg
-50 -50 -6 -3 -6 0.5 1.