2SAR544D - Midium Power Transistors

ROHM

Key Features

s 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max. ) (IC / IB= -1A / -50mA) 2) High speed switching.
Dimensions (Unit : mm) CPT3 (SC-63) 6.5 5.1 2.3 0.5 0.9 5.5 1.5.
Structure PNP Silicon epitaxial planar transistor.

2SAR544D midium power transistors by ROHM - Datasheet Preview

Datasheet Details

Part number	2SAR544D
Manufacturer	ROHM
File Size	397.43 KB
Description	Midium Power Transistors
Datasheet	2SAR544D Datasheet

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Full PDF Text Transcription for 2SAR544D (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SAR544D. For precise diagrams, tables, and layout, please refer to the original PDF.

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1.5 9.5 Midium Power Transistors (-80V / -2.5A) 2SAR544D  Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -1A / -50mA) 2) High speed switching  Dimensions (Unit : mm) CPT3 (SC-63) 6.5 5.1 2.3 0.5 0.9 5.5 1.5  Structure PNP Silicon epitaxial planar transistor  Applications Driver 0.75 0.9 2.3 (1) (2) 0.65 (3) 2.3 0.8Min. 2.5 0.5 1.0  Packaging specifications Type Package Code Basic ordering unit (pieces) CPT3 TL 2500  Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulsed Power dissipation Junction temperature Range of storage temperature VCBO VCEO VEBO IC ICP *1 PD *2 PD *3 Tj Tstg -80 -80 -6 -2.