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1.5 9.5
Midium Power Transistors (-80V / -2.5A)
2SAR544D
Features 1) Low saturation voltage, typically
VCE (sat) = -0.4V (Max.) (IC / IB= -1A / -50mA) 2) High speed switching
Dimensions (Unit : mm)
CPT3
(SC-63)
6.5 5.1
2.3 0.5
0.9 5.5 1.5
Structure PNP Silicon epitaxial planar transistor
Applications Driver
0.75
0.9 2.3
(1) (2)
0.65 (3) 2.3
0.8Min. 2.5
0.5 1.0
Packaging specifications
Type
Package Code Basic ordering unit (pieces)
CPT3 TL
2500
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol Limits
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC
Pulsed
Power dissipation
Junction temperature Range of storage temperature
VCBO VCEO VEBO
IC ICP *1 PD *2 PD *3 Tj Tstg
-80 -80 -6 -2.