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Transistors
Power Transistor (−80V, −4A)
2SB1644
2SB1644
!Features 1) Low saturation voltage.
(Typ. VCE(sat) = −0.5V at IC / IB = −3A / −0.3A) 2) Excellent DC current gain characteristics.
!External dimensions (Units : mm)
13.1 3.2
10.1
5.08 2.54
(3) (2) (1)
1.24 0.78
!Absolute maximum ratings (Ta = 25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage
Collector current
Collector power dissipation Junction temperature Storage temperature
* Single pulse, Pw = 100ms
Symbol VCBO VCEO VEBO
IC
PC Tj Tstg
Limits −80 −80 −5 −4 −6 30 150 −55~+150
Unit V V V
A (DC)
*A (Pulse)
W (Tc = 25°C) °C °C
8.8
1.3 4.5
1.3 0.4
0to0.3
0.5Min.
2SB1644 Datasheet