2SB1668 - Power Transistor

Product Overview

Rohm

Part number	2SB1668
Manufacturer	ROHM
File Size	72.57 KB
Description	Power Transistor
Datasheet	2SB1668 Datasheet
Additional preview pages of the 2SB1668 datasheet.

1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2607. !External dimensions (Units : mm) 10.0 4.5 φ 3.2 2.8 15.0 12.0 8.0 5.0 1.2 14.0 1.3 0.8 !Absolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Storage temperature ∗ Single pulse, Pw = 100ms 2.54 2.54 (1) (2) (3) (1) (2.

📁 Similar Datasheet

2SB166040ML - SCHOTTKY BARRIER DIODE CHIPS (Silan Microelectronics Joint-stock)
2SB166100MA - LOW IR SCHOTTKY BARRIER DIODE CHIPS (Silan Microelectronics Joint-stock)
2SB1664 - PNP Epitaxial Planar Silicon Darlington Transistor (Sanyo Semicon)
2SB1667 - Silicon PNP Transistor (Toshiba Semiconductor)
2SB1669 - PNP Transistor (INCHANGE)
2SB1669-Z - Silicon PNP Power Transistor (Inchange Semiconductor)
2SB1602 - TRANSISTOR (Toshiba Semiconductor)
2SB1603 - Silicon PNP Transistor (Panasonic Semiconductor)

Other Datasheets by Rohm

Published: Jul 28, 2010 |