Datasheet4U Logo Datasheet4U.com

2SC4132 - Power Transistor

Key Features

  • 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. (Typ. 20pF at VCB = 10V) 3) High transition frequency. (fT = 80MHz) 4) Complements the 2SB1236. zAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Collector-base voltage VCBO 120 Collector-emitter voltage VCEO 120 Emitter-base voltage VEBO 5 Collector current IC 2 ICP 3 Collector power dissipation 2SC4132 2SD1857 PC 0.5 2 1 Junction temperature Tj 150 Storage temperature Tstg.

📥 Download Datasheet

Datasheet Details

Part number 2SC4132
Manufacturer ROHM
File Size 34.60 KB
Description Power Transistor
Datasheet download datasheet 2SC4132 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Transistors 2SC4132 / 2SD1857 Power Transistor (120V, 1.5A) 2SC4132 / 2SD1857 zFeatures 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. (Typ. 20pF at VCB = 10V) 3) High transition frequency. (fT = 80MHz) 4) Complements the 2SB1236. zAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Collector-base voltage VCBO 120 Collector-emitter voltage VCEO 120 Emitter-base voltage VEBO 5 Collector current IC 2 ICP 3 Collector power dissipation 2SC4132 2SD1857 PC 0.5 2 1 Junction temperature Tj 150 Storage temperature Tstg −55 to +150 *1 Single pulse Pw = 10ms *2 When mounted on a 40 × 40 × 0.7mm ceramic board.