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2SC5574 - Power Transistor

Key Features

  • 1) Low saturation voltage. (Typ. VCE(sat) = 0.3V at IC / IB =2 / 0.2A) 2) Excellent DC current gain characteristics. 3) Pc = 30W (Tc = 25°C) 4) Wide SOA (safe operating area). 5) Complements the 2SA2017. !Absolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature.
  • Single pulse, Pw=100ms Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 100 80 6 4 6 2.

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Datasheet Details

Part number 2SC5574
Manufacturer ROHM
File Size 50.59 KB
Description Power Transistor
Datasheet download datasheet 2SC5574 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistors Power Transistor (80V, 4A) 2SC5574 2SC5574 !Features 1) Low saturation voltage. (Typ. VCE(sat) = 0.3V at IC / IB =2 / 0.2A) 2) Excellent DC current gain characteristics. 3) Pc = 30W (Tc = 25°C) 4) Wide SOA (safe operating area). 5) Complements the 2SA2017. !Absolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature * Single pulse, Pw=100ms Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 100 80 6 4 6 2 30 150 −55 ∼ +150 Unit V V V A(DC) A(Pulse) * W W(Tc=25°C) °C °C !External dimensions (Units : mm) 10.0 φ 3.2 4.5 2.8 15.0 12.0 8.0 14.0 5.0 1.2 1.3 0.8 2.54 2.54 (1) (2) (3) (1) (2) (3) ROHM : TO-220FN 0.75 2.