2SC5001
Key Features
- 07 - Rev.B 2SC5001 Data Sheet lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Values Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 6 V Collector current DC Pulsed r Power dissipation fo Junction temperature Range of storage temperature
- 1 Pw=10ms , single pulse d *2 Mounted on a substrate
- 3 Tc=25°C IC ICP *1 PD *2 PD *3 Tj Tstg de lElectrical characteristics (Ta = 25°C) n s Parameter Symbol Collector-emitter e n breakdown voltage BVCEO Collector-base m ig breakdown voltage BVCBO Emitter-base s breakdown voltage BVEBO Conditions IC = 1mA IC = 50mA IE = 50mA m e Collector cut-off current ICBO VCB = 20V o
- Emitter cut-off current c Collector-emitter saturation voltage e w Base-emitter saturation voltage t R e DC current gain No N Transition frequency IEBO VEB = 5V VCE(sat) IC = 4A, IB = 0.05A VBE(sat) IC = 4A, IB = 0.05A hFE 1 VCE = 2V, IC = 0.5A hFE 2 fT VCE = 2V, IC = 4A VCE = 5V, IE = -1.5A f=50MHZ 10 A 15 A 1 W 10 W 150 °C -55 to +150 °C Min. Typ. Max. Unit 20 - - V 30 - - V 6 - - V - - 1 mA - - 1 mA -
- 13 0.25 V -
- 9 1.2 V 120 - 390 - 82
