ROHM Semiconductor 2SCR372P
Middle Power Transistors
FEATURES
Low saturation voltage VCE (sat) = 0.3V (Max.) (IC / IB= 500mA / 50mA)● Dimensions (Unit : mm) MPT3 (1) (2) (3)
●
APPLICATIONS
Driver (1) Base (2) Collector (3) Emitter Abbreviated symbol : GX● Packaging specifications Package Type Code Basic ordering unit (pieces) 2SCR372P hFE values are classified follows : Item Q R hFE 120 to 270 180 to 390 Taping T100 1000
● Inner circuit (Unit : mm) (2) (1) (1) Base (2) Collector (3) Emitter (3)
● Absolute maximum ratings (Ta = 25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulsed Power dissipation Junction temperature Range of storage temperature *1 Pw=10ms, Single Pulse *2 Each terminal mounted on a recommended land. *3 Mounted on a ceramic board. (40x40x0.7mm) Symbol Limits VCBO VCEO VEBO IC ICP *1 PD *2 PD *3 Tj Tstg