ROHM Semiconductor 2SCR372P5
Middle Power Transistors
2SCR372P5 Middle Power Transistor(120V/700mA) Parameter VCEO IC Value 120V 0.7A lFeatures Low saturation voltage VCE(sat)=300mV(Max.) (IC/IB=500mA/50mA) lOutline SOT-89 SC-62 MPT3 lInner circuit Datasheet lApplication LOW FREQUENCY AMPLIFIER lPackaging specifications Part No. Package 2SCR372P5 SOT-89 (MPT3) Package size Taping code Reel size (mm) Tape width (mm) Basic ordering unit.(pcs) Marking 4540 T100 180 12 1000 GX © 2016 ROHM Co., Ltd. All rights reserved. 1/6 20160526 - Rev.002 2SCR372P5 lAbsolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature Datasheet Symbol Values Unit VCBO 120 V VCEO 120 V VEBO 6 V IC 0.7 A ICP*1 1.4 A PD*2 0.5 W PD*3 2.0 W Tj 150 ℃ Tstg -55 to +150 ℃ lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. Collector-base breakdown voltage BVCBO IC = 100μA 120 - - V Collector-...