2SD1858 - Medium Power Transistor

ROHM

Key Features

1) Low VCE(sat) = 0.15V(Typ. ) (lC / lB = 500mA / 50mA) 2) Compliments 2SB1237.
Structure Epitaxial planar type NPN silicon transistor.
Dimensions (Unit : mm) 6.8 +.
0.2 2.5 +.
0.2 4.4.
+ 0.2 1.0 0.9 14.5.
+0.5 0.5+.
0.1 (1) (2) (3) 2.54 2.54 ROHM : ATV 1.05 0.45 +.
0.1 (1) Emitter (2) Collector (3) Base.
Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 40 V Collector-emitte.

2SD1858 medium power transistor by ROHM - Datasheet Preview

Datasheet Details

Part number	2SD1858
Manufacturer	ROHM
File Size	134.65 KB
Description	Medium Power Transistor
Datasheet	2SD1858 Datasheet

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Medium Power Transistor (32V, 1A) 2SD1858 Features 1) Low VCE(sat) = 0.15V(Typ.) (lC / lB = 500mA / 50mA) 2) Compliments 2SB1237 Structure Epitaxial planar type NPN silicon transistor Dimensions (Unit : mm) 6.8 +− 0.2 2.5 +− 0.2 4.4 −+ 0.2 1.0 0.9 14.5 −+0.5 0.5+− 0.1 (1) (2) (3) 2.54 2.54 ROHM : ATV 1.05 0.45 +− 0.1 (1) Emitter (2) Collector (3) Base Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 32 V Emitter-base voltage VEBO 5 V Collector current 1 A (DC) IC 2 A (Pulse) ∗1 Collector power dissipation PC 1 W ∗2 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ∗1 Pw=20ms, duty=1/2 ∗2 When it is mounted on the copper clad PCB (1.