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2SD1919 - Medium Power Transistor

Key Features

  • 1) Low VCE(sat). VCE(sat) = 0.5V (Typ. ) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 / 2SB891F / 2SB822 / 2SB1277 / 2SB911M FStructure Epitaxial planar type NPN silicon transistor FExternal dimensions (Units: mm) (96-217-B24) 256 Transistors FAbsolute maximum ratings (Ta = 25_C) 2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 / 2SD1919 / 2SD1227M FElectrical characteristics (Ta = 25_C) 257 Transistors FPackaging specifications and hFE 2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 /.

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Datasheet Details

Part number 2SD1919
Manufacturer ROHM
File Size 124.57 KB
Description Medium Power Transistor
Datasheet download datasheet 2SD1919 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistors Medium Power Transistor (32V, 2A) 2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 / 2SD1919 / 2SD1227M FFeatures 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.