2SD1949 - Medium Power Transistor

ROHM

Key Features

1)High current. (IC=0.5A) 2)Low VCE(sat) VCE(sat)≦400mV 　 at IC=150mA/IB=15mA lOutline SOT-323 SOT-346 　　 2SD1949 (UMT3) 2SD1484K (SMT3) 　　　　　　　　　　　　　　　　　　　　　　 lInner circuit l.

2SD1949 medium power transistor by ROHM - Datasheet Preview

Datasheet Details

Part number	2SD1949
Manufacturer	ROHM
File Size	1.63 MB
Description	Medium Power Transistor
Datasheet	2SD1949 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2SD1940	SILICON POWER TRANSISTOR	SavantIC
2SD1940	NPN Transistor	INCHANGE
2SD1941	SILICON POWER TRANSISTOR	SavantIC
2SD1941	NPN Transistor	INCHANGE
2SD1947A	NPN EPITAXIAL TYPE TRANSISTOR	Toshiba Semiconductor

Other Datasheets by ROHM

Part Number	Description
2SD1943	Triple Diffused Planer NPN Silicon Transistor
2SD1944	High-current gain Power Transistor
2SD1918	Power Transistor
2SD1919	Medium Power Transistor
2SD1929	Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

2SD1949 / 2SD1484K Middle Power Transistor (50V, 500mA) Datasheet Parameter VCEO IC Value 50V 500mA lFeatures 1)High current. (IC=0.5A) 2)Low VCE(sat) VCE(sat)≦400mV 　 at IC=150mA/IB=15mA lOutline SOT-323 SOT-346 　　 2SD1949 (UMT3) 2SD1484K (SMT3) 　　　　　　　　　　　　　　　　　　　　　　 lInner circuit lApplication LOW FREQUENCY AMPLIFIER, DRIVER lPackaging specifications Part No. Package Package size 2SD1949 2SD1484K SOT-323 (UMT3) SOT-346 (SMT3) 2021 2928 Taping code T106 T146 　　　　　　　　　　　　　　　　　　　　　　 Reel size Tape width (mm) (mm) Basic ordering unit.(pcs) hFE rank Marking 180 8 3000 PQR Y 180 8 3000 QR Y 　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　 www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 1/7 20160824 - Rev.