2SD2114K - High-current Gain Medium Power Transistor

ROHM

Key Features

1)High DC current gain 2)High emitter-base voltage. 　 VEBO=12V 3)Low VCE(sat). 　 VCE(sat)=180mV(Typ. ) 　 (IC/IB=500mA/20mA) lOutline SMT3 　　 SOT-346 SC-59 　　　　　　　　　　　 lInner circuit Datasheet 　　 l.

2SD2114K high-current gain medium power transistor by ROHM - Datasheet Preview

Datasheet Details

Part number	2SD2114K
Manufacturer	ROHM
File Size	1.31 MB
Description	High-current Gain Medium Power Transistor
Datasheet	2SD2114K Datasheet

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2SD2114K High-current Gain Medium Power Transistor (20V, 500mA) Parameter VCEO IC Value 20V 0.5A lFeatures 1)High DC current gain 2)High emitter-base voltage. 　 VEBO=12V 3)Low VCE(sat). 　 VCE(sat)=180mV(Typ.) 　 (IC/IB=500mA/20mA) lOutline SMT3 　　 SOT-346 SC-59 　　　　　　　　　　　 lInner circuit Datasheet 　　 lApplication LOW FREQUENCY AMPLIFIER, MUTING, DC-DC CONVERTER lPackaging specifications 　　　　　　　　　　　　　　　　　　　　　　 Part No. Package Package size Taping code Reel size Tape width (mm) (mm) Basic ordering unit.(pcs) Marking 2SD2114K SMT3 2928 T146 180 8 3000 BB 　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　 www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved.