2SD2118 - Transistor

Product Overview

Rohm

Part number	2SD2118
Manufacturer	ROHM
File Size	175.22 KB
Description	Transistor
Datasheet	2SD2118 Datasheet
Additional preview pages of the 2SD2118 datasheet.

1) Low VCE(sat). VCE(sat) = 0.25V (Typ. ) (IC/IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1412. zDimensions (Unit : mm) 2SD2118 zStructure Epitaxial planar type NPN silicon transistor ROHM : CPT3 EIAJ : SC-63 zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Collector-base voltage VCBO 50 Collector-emitter voltage VCEO 20 Emitter-base voltage VEBO 6 Collector current IC 5 ICP 10 Collector power dissipation 2SD2118 Junction te.

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Published: Apr 3, 2005 |