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2SD2144S - High-current Gain Medium Power Transistor

Key Features

  • 1) High DC current gain. hFE = 1200 (Typ. ) 2) High emitter-base voltage. VEBO = 12V (Min. ) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ. ) (IC / IB = 500mA / 20mA) FStructure Epitaxial planar type NPN silicon transistor FExternal dimensions (Units: mm) (96-232-C107) 232 Transistors FAbsolute maximum ratings (Ta = 25_C) 2SD2114K / 2SD2144S FElectrical characteristics (Ta = 25_C) FPackaging specifications and hFE FElectrical characteristic curves hFE values are classified as follows : 233 Trans.

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Datasheet Details

Part number 2SD2144S
Manufacturer ROHM
File Size 124.29 KB
Description High-current Gain Medium Power Transistor
Datasheet download datasheet 2SD2144S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S FFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO = 12V (Min.) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ.