2SD2144 Datasheet PDF

Transistors 2SD2114K / 2SD2144S High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) zStructure Epitaxial planar type NPN silicon transistor zExternal dimensions (Unit : mm) 2SD2114K 2.9±0.2 1.9±0.2 0.95 0.95 (1) (2) 1.1+−00..21 0.8±0.1 0∼0.1 1.6+−00..21 2.8±0.2 0.3∼0.6 ROHM : SMT3 EIAJ : SC-59 (3) 0.4 +0.1 −0.05 0.15−+00..016 All terminals have same dimensions ∗ Abbreviated symbol: BB (1) Emitter (2) Base (3) Collector 2SD2144S 4±0.2 2±0.2 3±0.2 3Min. (15Min.) ROHM : SPT EIAJ : SC-72 ∗ Denotes hFE 0.45+−00..1055 2.5+−00..41 5 (1) (2) (3) 0.5 0.45 +0.15 −0.05 (1) Emitter (2) Collector (3) Base zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Collector-base voltage VCBO Collector-emitter voltage VCEO Emitter-base voltage VEBO Collector current IC Collector power 2SD2114K dissipation 2SD2144S Junct...