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2SD2153 - High gain amplifier transistor

Key Features

  • 1) Low saturation voltage, typically VCE(sat) = 0.12V at IC = IB = 1A / 20mA 2) Excellent DC current gain characteristics. !External dimensions (Units : mm) 4.0 1.0 2.5 0.5 1.5 0.4 (1) 3.0 0.5 (3) 4.5 1.6 (2) (1) Base (2) Collector (3) Emitter 1.5 0.4 ROHM : MPT3 EIAJ : SC-62 !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature ∗ Single.

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Datasheet Details

Part number 2SD2153
Manufacturer ROHM
File Size 50.46 KB
Description High gain amplifier transistor
Datasheet download datasheet 2SD2153 Datasheet

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2SD2153 Transistors High gain amplifier transistor (25V, 2A) 2SD2153 !Features 1) Low saturation voltage, typically VCE(sat) = 0.12V at IC = IB = 1A / 20mA 2) Excellent DC current gain characteristics. !External dimensions (Units : mm) 4.0 1.0 2.5 0.5 1.5 0.4 (1) 3.0 0.5 (3) 4.5 1.6 (2) (1) Base (2) Collector (3) Emitter 1.5 0.4 ROHM : MPT3 EIAJ : SC-62 !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature ∗ Single pulse, Pw=10ms Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 30 25 6 2 3 0.