ROHM Semiconductor 2SD2153
25V 2A High gain amplifier transistor
| Part No. | 2SD2153 |
|---|---|
| Datasheet | 2SD2153 Download |
| Manufacturer |  ROHM Semiconductor |
| Description | 25V 2A High gain amplifier transistor |
| Buy | Stock & Price |
FEATURES
1) Low saturation voltage, typically VCE(sat) = 0.12V at IC = IB = 1A / 20mA 2) Excellent DC current gain characteristics.●Dimensions (Unit : mm) 0.4 1.5 4.0 1.0 2.5 0.5 (1) (2) (3) 0.5 3.0 0.4 1.5 0.4 ROHM : MPT3 EIAJ : SC-62 SOT-89
●Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current VCBO 30 VCEO 25 VEBO 6 2 IC 3 Collector power dissipation 0.5 PC 2 ∗2 Junction temperature Storage temperature Tj 150 Tstg −55 to +150 ∗1 Single pulse, Pw=10ms ∗2 Mounted on a 40+ 40+ t0.7mm Ceramic substrate Unit V V V A(DC) A(Pulse) ∗1 W °C °C
●Packaging specifications and hFE Type Package hFE Marking Code Basic ordering unit (pieces) ∗ Denotes hFE 2SD2153 MPT3 UVW DN ∗ T100 1000
●Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 30 − − V IC = 50μA Collector-emitter breakdown voltage BVCEO 25 − − V IC = 1mA Emitter-base breakd...
