Additional preview pages of the 2SD2150 datasheet.
Product details
Features
1) Low VCE(sat). VCE(sat) = 0.2V(Typ. ) (IC / IB = 2A / 0.1A)
2) Excellent current gain characteristics. 3) Complements the 2SB1424.
zStructure Epitaxial planar type NPN silicon transistor
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
40
Collector-emitter voltage
VCEO
20
Emitter-base voltage
VEBO
6
Collector current
3 IC
5
Collector power dissipation
PC
0.5 2
Junction temperature
Tj 150
Storage temperature
Tstg
∗1 Single pulse Pw=1.