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2SD2150 - NPN Transistor

Key Features

  • Power dissipation : 0.5 W Tamb=25 PCM Collector current ICM : 3 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range TJ Tstg: -55 to +150.

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Datasheet Details

Part number 2SD2150
Manufacturer Jiangsu Changjiang Electronics
File Size 76.64 KB
Description NPN Transistor
Datasheet download datasheet 2SD2150 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SD2150 SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 TRANSISTOR NPN FEATURES Power dissipation : 0.